Plasma catalyst chemical reaction apparatus

ABSTRACT

A plasma device is disclosed. The plasma device includes: at least one electrode including a nanoporous dielectric layer disposed on at least a portion thereof, the nanoporous dielectric layer including a plurality of pores, wherein at least a portion of the plurality of pores include a catalyst embedded therein.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims the benefit of and priority to U.S.Provisional Application Ser. No. 61/763,250, filed Feb. 11, 2013, theentire contents of which are incorporated by reference herein.

BACKGROUND

1. Technical Field

The present disclosure relates to plasma devices and processes forsurface processing, removal or deposition of biological or othermaterials. More particularly, the disclosure relates to an apparatus andmethod for generating and directing chemically reactive,plasma-generated species in a plasma device along with excited-statespecies (e.g., energetic photons) that are specific to the selectedingredients.

2. Background of Related Art

Electrical discharges in dense media, such as liquids and gases at ornear atmospheric pressure, can, under appropriate conditions, result inplasma formation. Plasmas have the unique ability to create largeamounts of chemical species, such as ions, radicals, electrons,excited-state (e.g., metastable) species, molecular fragments, photons,and the like. The plasma species may be generated in a variety ofinternal energy states or external kinetic energy distributions bytailoring plasma electron temperature and electron density. In addition,adjusting spatial, temporal and temperature properties of the plasmacreates specific changes to the material being irradiated by the plasmaspecies and associated photon fluxes. Plasmas are also capable ofgenerating photons including vacuum ultraviolet photons that havesufficient energy to initiate photochemical and photocatalytic reactionpaths in biological and other materials that are irradiated by theplasma.

SUMMARY

Plasmas have broad applicability to provide alternative solutions toindustrial, scientific and medical needs, especially workpiece surfaceprocessing at low temperature. Plasmas may be delivered to a workpiece,thereby affecting multiple changes in the properties of materials uponwhich the plasmas impinge. Plasmas have the unique ability to createlarge fluxes of radiation (e.g., ultraviolet), ions, photons, electronsand other excited-state (e.g., metastable) species which are suitablefor performing material property changes with high spatial, materialselectivity, and temporal control. Selective plasma may also remove adistinct upper layer of a workpiece but have little or no effect on aseparate underlayer of the workpiece or it may be used to selectivelyremove a particular tissue type from a mixed tissue region orselectively remove a tissue with minimal effect to adjacent organs ofdifferent tissue type, e.g., removal of extra cellular matrix.

One suitable application of the unique chemical species is to drivenon-equilibrium or selective chemical reactions at or within theworkpiece to provide for selective removal of only certain types ofmaterials. Such selective processes are especially sought in biologicaltissue processing (e.g., mixed or multi-layered tissue), which allowsfor cutting and removal of tissue at low temperatures with differentialselectivity to underlayers and adjacent tissues. This is particularlyuseful for removal of extra cellular metrices, biofilms, mixtures offatty and muscle tissue, and debridement of surface layers.

The plasma species are capable of modifying the chemical nature oftissue surfaces by breaking chemical bonds, substituting or replacingsurface-terminating species (e.g., surface functionalization) throughvolatilization, gasification or dissolution of surface materials (e.g.,gas and liquid base etching). With proper techniques, material choicesand conditions, one can selectively remove one type of tissue entirelywithout affecting a nearby different type of tissue. Controlling plasmaconditions and parameters (including S-parameters, V, I, Θ, and thelike) allows for the selection of a set of specific plasma particles,which, in turn, allows for selection of chosen chemical pathways formaterial removal or modification as well as selectivity of removal ofdesired tissue type. The present disclosure provides a system and methodfor creating plasma under a broad range of conditions including tailoredgeometries, various plasma feedstock media, number and location ofelectrodes and electrical excitation parameters (e.g., voltage, current,phase, frequency, pulse condition, etc.) all of which affect selectivityof the plasma to the plasma irradiated work piece.

The supply of electrical energy that ignites and sustains the plasmadischarge is delivered through substantially conductive electrodes thatare capacitively or inductively coupled with the ionizable media andother plasma feedstocks. The present disclosure also provides methodsand apparatus that utilize specific electrode structures that improveand enhance desirable aspects of plasma operation such as higherelectron temperature, greater catalytic effect on feedstocks and higheramount of secondary emission. In particular, the present disclosureprovides porous media both for controlled release of chemical reactantsand for holding catalytic materials.

The plasma includes electrons, radicals, metastable species and photonsthat drive the reaction at the workpiece, including energetic electronsdelivered thereto. Controlling plasma conditions and parameters allowsfor selection of a set of specific particles, which, in turn, allows forselection of chemical pathways for material removal or modification aswell as selectivity of removal of desired tissue type. The presentdisclosure also provides a system and method for generating plasmas thatoperate at or near atmospheric pressure. The plasmas include electronsthat drive reactions at material surfaces in concert with other plasmaspecies. Electrons delivered to the material surface can initiate avariety of processes including bond scission, which enablesvolatilization in subsequent reactions. Tailored plasmas may enhancepolymerization of monomers. The electron-driven reactions actsynergistically with associated fluxes to achieve removal rates ofmaterial greater than either of the reactions acting alone.

According to one embodiment of the present disclosure, a plasma deviceis disclosed. The plasma device includes: at least one electrodeincluding a nanoporous dielectric layer disposed on at least a portionthereof, the nanoporous dielectric layer including a plurality of pores,wherein at least a portion of the plurality of pores include a catalystembedded therein.

According to one aspect of the above embodiment, the dielectric coatingis selected from the group consisting of an oxide, a nitride, a nativeoxide and a native nitride.

According to one aspect of the above embodiment, the metal alloy isselected from the group consisting of an aluminum alloy and a titaniumalloy.

According to one aspect of the above embodiment, the catalyst isselected from the group consisting of ruthenium, rhodium, palladium,silver, osmium, iridium, platinum, gold, nickel, copper, cobalt, iron,and oxides and bimetal combinations thereof.

According to one aspect of the above embodiment, the plasma devicefurther includes: an outer electrode having a substantially cylindricaltubular shape defining a lumen therethrough; and an inner electrodecoaxially disposed within lumen, the inner electrode having asubstantially cylindrical tubular shape.

According to one embodiment of the present disclosure, a plasma systemis disclosed. The plasma system includes: a plasma device having atleast one electrode including a nanoporous dielectric layer disposed onat least a portion thereof, the nanoporous dielectric layer including aplurality of pores, wherein at least a portion of the plurality of poresinclude a catalyst embedded therein; an ionizable media source coupledto the plasma device and configured to supply ionizable media thereto;and a power source coupled to the inner and outer electrodes andconfigured to ignite the ionizable media at the plasma device to form aplasma effluent.

According to one aspect of the above embodiment, the dielectric coatingis selected from the group consisting of an oxide, a nitride, a nativeoxide and a native nitride.

According to one aspect of the above embodiment, the metal alloy isselected from the group consisting of an aluminum alloy and a titaniumalloy.

According to one aspect of the above embodiment, the catalyst isselected from the group consisting of ruthenium, rhodium, palladium,silver, osmium, iridium, platinum, gold, nickel, copper, cobalt, iron,and oxides and bimetal combinations thereof.

According to one aspect of the above embodiment, the plasma devicefurther includes: an outer electrode having a substantially cylindricaltubular shape defining a lumen therethrough; and an inner electrodecoaxially disposed within lumen, the inner electrode having asubstantially cylindrical tubular shape.

According to one embodiment of the present disclosure, a method isdisclosed. The method includes: forming a nanoporous dielectric layerincluding a plurality of pores on at least a portion of an electrode;and embedding at least a portion of the plurality of pores with acatalyst.

According to one aspect of the above embodiment, forming of thenanoporous dielectric layer further includes: electropolishing at leasta portion of the electrode.

According to one aspect of the above embodiment, forming of thenanoporous dielectric layer further includes: forming an intermediatedielectric layer on the electropolished portion of the electrode byanodizing the electropolished portion.

According to one aspect of the above embodiment, forming of thenanoporous dielectric layer further includes: removing the intermediatedielectric layer from the electropolished portion to form a plurality ofprotuberances on the electrode.

According to one aspect of the above embodiment, forming of thenanoporous dielectric layer further includes: forming the nanoporousdielectric layer including the plurality of pores on the plurality ofprotuberances.

According to one aspect of the above embodiment, forming of thenanoporous dielectric layer further includes: removing a portion of theplurality of pores contacting the plurality of protuberances.

According to one aspect of the above embodiment, forming of thenanoporous dielectric layer further includes: widening the plurality ofpores.

According to one aspect of the above embodiment, forming of thenanoporous dielectric layer further includes: submerging the nanoporousdielectric layer in a solution of a salt of the catalyst.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of thedisclosure and, together with a general description of the disclosuregiven above, and the detailed description of the embodiments givenbelow, serve to explain the principles of the disclosure, wherein:

FIG. 1 is a schematic diagram of a plasma system according to thepresent disclosure;

FIG. 2 is a perspective, cross-sectional perspective view of The plasmadevice according to the present disclosure;

FIG. 3 is a side, cross-sectional view of the plasma device of FIG. 2;

FIGS. 4A-4H are enlarged, cross-sectional views of a portion of anelectrode surface of the plasma device of FIG. 2;

FIG. 5 shows a flow chart illustrating a method for forming a porouscoating on the electrodes of the plasma device of FIG. 2;

FIG. 6A is scanning electron microscope image of a cross-sectional viewof a catalyst embedded metal oxide layer according to the presentdisclosure;

FIG. 6B is scanning electron microscope image of a top view of acatalyst embedded metal oxide layer according to the present disclosure;

FIG. 7 is a photograph of a cross-sectional view of plasma-treatedtissue according to the present disclosure;

FIG. 8 is a bar graph illustrating mass loss of plasma-treated tissueaccording to the present disclosure; and

FIG. 9 is a bar graph illustrating emission spectra of plasma speciesgenerated by plasma in the presence and in the absence of embeddednickel catalysts according to the present disclosure.

DETAILED DESCRIPTION

Plasmas are generated using electrical energy that is delivered aseither direct current (DC) electricity or alternating current (AC)electricity, in either continuous or pulsed modes, at frequencies fromabout 0.1 hertz (Hz) to about 100 gigahertz (GHz), including radiofrequency (“RF”, from about 0.1 MHz to about 100 MHz) and microwave(“MW”, from about 0.1 GHz to about 100 GHz) bands, using appropriategenerators, electrodes, and antennas. Choice of excitation frequency,the workpiece, as well as the electrical circuit that is used to deliverelectrical energy to the circuit affects many properties andrequirements of the plasma. The performance of the plasma chemicalgeneration, the gas or liquid feedstock delivery system and the designof the electrical excitation circuitry are interrelated—as the choicesof operating voltage, frequency and current levels, as well as phase,affect the electron temperature and electron density. Further, choicesof electrical excitation and plasma device hardware also determine how agiven plasma system responds dynamically to the introduction of newingredients to the host plasma gas or liquid media. The correspondingdynamic adjustment of the electrical drive, such as via dynamic matchnetworks or adjustments to voltage, current, or excitation frequency maybe used to maintain controlled power transfer from the electricalcircuit to the plasma.

Referring initially to FIG. 1, a plasma system 10 is disclosed. Thesystem 10 includes a plasma device 12 that is coupled to a power source14, an ionizable media source 16 and a precursor or pre-ionizationsource 18. Power source 14 includes any suitable components fordelivering power or matching impedance to plasma device 12. Moreparticularly, the power source 14 may be any radio frequency generatoror other suitable power source capable of producing electrical power toignite and sustain the ionizable media to generate a plasma effluent 32.The plasma device 12 may be utilized as an electrosurgical pencil forapplication of plasma to tissue and the power source 14 may be anelectrosurgical generator that is adapted to supply the device 12 withelectrical power at a frequency from about 0.1 MHz to about 2,450 MHzand in another embodiment from about 1 MHz to about 160 MHz. The plasmamay also be ignited by using continuous or pulsed direct current (DC)electrical energy or continuous or pulsed RF electrical energy orcombinations thereof.

The precursor source 18 may include a bubbler or a nebulizer configuredto aerosolize precursor feedstocks prior to introduction thereof intothe device 12. In embodiments, the precursor source 18 may also includea micro droplet or injector system capable of generating predeterminedrefined droplet volume of the precursor feedstock from about 1femtoliter to about 1 nanoliter in volume. The precursor source 18 mayalso include a microfluidic device, a piezoelectric pump, or anultrasonic vaporizer.

The system 10 provides a flow of plasma through the device 12 to aworkpiece “W” (e.g., tissue). Plasma feedstocks, which include ionizablemedia and precursor feedstocks, are supplied by the ionizable mediasource 16 and the precursor source 18, respectively, to the plasmadevice 12. During operation, the precursor feedstock and the ionizablemedia are provided to the plasma device 12 where the plasma feedstocksare ignited to form plasma effluent 32 containing ions, radicals,photons from the specific excited species and metastables that carryinternal energy to drive desired chemical reactions in the workpiece “W”or at the surface thereof The feedstocks may be mixed upstream from theignition point or midstream thereof (e.g., at the ignition point) of theplasma effluent, as shown in FIG. 1 and described in more detail below.

The ionizable media source 16 provides ionizable feedstock gas mix tothe plasma device 12. The ionizable media source 16 is coupled to theplasma device 12 and may include a storage tank and a pump (notexplicitly shown). The ionizable media may be a liquid or a gas such asargon, helium, neon, krypton, xenon, radon, carbon dioxide, nitrogen,hydrogen, oxygen, etc. and their mixtures, and the like, or a liquid.These and other gases may be initially in a liquid form that is gasifiedduring application.

The precursor source 18 provides precursor feedstock to the plasmadevice 12. The precursor feedstock may be either in solid, gaseous orliquid form and may be mixed with the ionizable media in any state, suchas solid, liquid (e.g., particulates, nanoparticles or droplets), gas,and the combination thereof. The precursor source 18 may include aheater, such that if the precursor feedstock is liquid, it may be heatedinto gaseous state prior to mixing with the ionizable media.

In one embodiment, the precursors may be any chemical species capable offorming reactive species such as ions, electrons, excited-state (e.g.,metastable) species, molecular fragments (e.g., radicals) and the like,when ignited by electrical energy from the power source 14 or whenundergoing collisions with particles (electrons, photons, or otherenergy-bearing species of limited and selective chemical reactivity)formed from ionizable media 16. More specifically, the precursors mayinclude chemical compounds having various reactive functional groups,such as acyl halide, alcohol, aldehyde, alkane, alkene, amide, amine,butyl, carboxlic, cyanate, isocyanate, ester, ether, ethyl, halide,haloalkane, hydroxyl, ketone, methyl, nitrate, nitro, nitrile, nitrite,nitroso, peroxide, hydroperoxide, oxygen, hydrogen, nitrogen, andcombination thereof. In embodiments, the chemical precursors may bewater, halogenoalkanes, such as dichloromethane, tricholoromethane,carbon tetrachloride, difluoromethane, trifluoromethane, carbontetrafluoride, and the like; peroxides, such as hydrogen peroxide,acetone peroxide, benzoyl peroxide, and the like; alcohols, such asmethanol, ethanol, isopropanol, ethylene glycol, propylene glycol,alkalines such as NaOH, KOH, amines, alkyls, alkenes, and the like. Suchchemical precursors may be applied in substantially pure, mixed, orsoluble form.

The precursors and their functional groups as well as nanoparticles maybe delivered to a surface to react with the surface species (e.g.,molecules) of the workpiece “W.” In other words, the functional groupsmay be used to modify or replace existing chemical surface terminationsof the workpiece “W.” The functional groups react readily with thesurface species due to their high reactivity and the reactivity impartedthereto by the plasma. In addition, the functional groups are alsoreacted within the plasma volume prior to delivering the plasma volumeto the workpiece.

Some functional groups generated in the plasma can be reacted in situ tosynthesize materials that subsequently form a deposition upon thesurface. This deposition may be used for stimulating healing, killingbacteria, and increasing hydrophilic or hydroscopic properties tominimize tissue sticking to the electrode or to other tissue. Inaddition, deposition of certain function groups may also allow forencapsulation of the surface to achieve predetermined gas/liquiddiffusion (e.g., allowing gas permeation but preventing liquidexchange), to bond or stimulate bonding of surfaces, or to apply as aphysically protective layer.

The ionizable media source 16 and the precursor source 18 and may becoupled to the plasma device 12 via tubing 13 a and 13 b, respectively.The tubing 13 a and 13 b may be combined into a single tubing (e.g., viaa Y coupling) to deliver a mixture of the ionizable media and theprecursor feedstock to the device 12 at a proximal end thereof. Thisallows for the plasma feedstocks, e.g., the precursor feedstocks,nanoparticles and the ionizable gas, to be delivered to the plasmadevice 12 simultaneously prior to ignition of the mixture therein.

In another embodiment, the ionizable media source 16 and the precursorssource 18 may be coupled to the plasma device 12 via the tubing 13 a and13 b at separate connections, such that the mixing of the feedstocksoccurs within the plasma device 12 upstream from the ignition point. Inother words, the plasma feedstocks are mixed proximally of the ignitionpoint, which may be any point between the respective sources 16 and 18and the plasma device 12, prior to ignition of the plasma feedstocks tocreate the desired mix of the plasma effluent species flux (e.g.,particles/cm²sec) for each specific surface treatment on the workpiece“W.”

In a further embodiment, the plasma feedstocks may be mixed midstream,e.g., at the ignition point or downstream of the plasma effluent,directly into the plasma effluent 32. More specifically, the tubing 13 aand 13 b may be coupled to the device 12 at the ignition point, suchthat the precursor feedstocks and the ionizable media are ignitedconcurrently as they are mixed. It is also envisioned that the ionizablemedia may be supplied to the device 12 proximally of the ignition point,while the precursor feedstocks are mixed therewith at the ignitionpoint.

In a further illustrative embodiment, the ionizable media may be ignitedin an unmixed state and the precursors may be mixed directly into theignited plasma effluent 32. Prior to mixing, the plasma feedstocks maybe ignited individually. The plasma feedstock is supplied at apredetermined pressure to create a flow of the medium through the device12, which aids in the reaction of the plasma feedstocks and produces theplasma effluent 32. The plasma effluent 32 according to the presentdisclosure is generated at or near atmospheric pressure under normalatmospheric conditions.

With reference to FIGS. 2 and 3, the device 12 includes an innerelectrode 122 disposed coaxially within an outer electrode 123. As shownin FIG. 2, the outer electrode 123 has a substantially cylindricaltubular shape having a lumen 125 defined therethrough. The innerelectrode 122 has a substantially cylindrical shape (e.g., rod-shaped)having a closed distal portion 124. The electrodes 122 and 123 may beformed from a conductive material suitable for ignition of plasma suchas metals and metal-ceramic composites. In one embodiment, theelectrodes 122 and 123 may be formed from a conductive metal including anative oxide or nitride compound disposed thereon.

The device 12 also includes an electrode spacer 127 disposed between theinner and outer electrodes 122 and 123. The electrode spacer 127 may bedisposed at any point between the inner and outer electrodes 122 and 123to provide for a coaxial configuration between the inner and outerelectrodes 122 and 123. The electrode spacer 127 includes a centralopening 140 adapted for insertion of the inner electrode 122therethrough and one or more flow openings 142 disposed radially aroundthe central opening 140 to allow for the flow of ionizable media andprecursors through the device 12. In embodiments, the electrode spacer127 may be formed from a dielectric material, such as ceramic, toprovide for capacitive coupling between the inner and outer electrodes122 and 123.

The electrode spacer 127 may be frictionally fitted to the electrodes122 and 123 to secure the inner electrode 122 within the outer electrode123. In another embodiment, the electrode spacer 127 may be secured tothe outer electrode 123 but be slidably disposed over the innerelectrode 122. This configuration provides for longitudinal adjustmentof the distal portion 124 of the inner electrode 122 relative to theouter electrode 123 to achieve a desired spatial relationship betweenthe electrodes 122 and 123 (e.g., controlling the exposure of the distalportion 124 of the inner electrode 122).

In embodiments, the distal portion 124 of the inner electrode 122 may beextended past the distal end of the outer electrode 123. In anotherembodiment, the distal portion 124 of the inner electrode 122 may beretracted into the lumen 125, such that the distal portion 124 is fullyenclosed by the outer electrode 123. In a further embodiment, the distalportion 124 of the inner electrode 122 may be flush with the distal endof the outer electrode 123.

One of the electrodes 122 and 123 may be an active electrode and theother may be a neutral (e.g., indifferent) or return electrode tofacilitate in RF energy coupling through an isolation transformer (notshown) disposed within the generator 14 to provide electrical isolationwith the workpiece “W.” Each of the electrodes 122 and 123 are coupledto the power source 14 that drives plasma generation, such that theenergy from the power source 14 may be used to ignite the plasmafeedstocks flowing through the device 12. More specifically, theionizable media and the precursors flow through the device 12 throughthe openings 142 and the lumen 125 (e.g., through the electrode spacer127 and between the inner and outer electrodes 122 and 123). When theelectrodes 122 and 123 are energized, the plasma feedstocks are ignitedand form the plasma effluent 32 which is emitted from the distal end ofthe device 12 onto the workpiece “W.”

As shown in FIG. 3, the inner electrode 122 and outer electrode 123 mayinclude a coating 150 formed from an insulative or semiconductivematerial deposited as a film unto the inner conductor (e.g., atomiclayer deposition) or as a dielectric sleeve or layer. The coating isdisposed on the outer surface of the inner electrode 122 and on theinner surface of the outer electrode 123. In other words, the surfacesof the inner and outer electrodes 122 and 123 facing the lumen 125include the coating 150. In one embodiment, the coating may cover theentire surface of the inner and outer electrodes 122 and 123 (e.g.,outer and inner surface thereof, respectively). In another embodiment,the coating may cover only a portion of the electrodes 122 and 123.

The coating may be a nanoporous native oxide, or a native nitride of themetal from which the inner and outer electrodes are formed, or may be adeposited layer or a layer formed by ion implantation. In embodiments,the inner and outer electrodes 122 and 123 are formed from an aluminumalloy and the coating is aluminum oxide (Al₂O₃) or aluminum nitride(AlN). In another illustrative embodiment, the inner and outerelectrodes 122 and 123 are formed from a titanium alloy and the coatingis titanium oxide (TiO₂) or titanium nitride (TiN). In embodiments, thecoating may also be a non-native metal oxide or nitride, such as zincoxide (ZnO₂) and magnesium oxide (MgO). The coating may also be used toreduce tissue sticking to prevent tissue sticking to the electrode.

The inner and outer electrodes 122 and 123 and the coating 150 may alsobe configured as a heterogeneous system. The inner and outer electrodes122 and 123 may be formed from any suitable electrode substrate material(e.g., conductive metal or a semi-conductor) and the coating may bedisposed thereon by various coating processes. The coating may be formedon the inner and outer electrodes 122 and 123 by exposure to anoxidizing environment, anodization, electrochemical processing, ionimplantation, or deposition (e.g., sputtering, chemical vapordeposition, atomic layer deposition, etc.).

In another embodiment the coating on electrodes 122 and 123 may bedifferent on each electrode and may serve separate purposes. One coating150 (e.g., on the electrode 122) can be selected to promote increasedsecondary electron emission while coating on the other electrode (e.g.,electrode 123) can be selected to promote specific chemical reactions(e.g., act as a catalyst).

In embodiments, the coating provides capacitive coupling between theinner and outer electrodes 122 and 123. The resulting capacitive circuitelement structure provides a net negative bias potential at the surfaceof the inner and outer electrodes 122 and 123, which attracts the ionsand other species from the plasma effluent. These species then bombardthe coating 150 and release energetic electrons.

Materials having high secondary electron emission property, γ, inresponse to ion and/or photon bombardment are suitable for forming thecoating 150. Such materials include insulators and/or semiconductors.These materials have a relatively high γ, where γ represents the numberof electrons emitted per incident bombardment particle. Thus, metalsgenerally have a low γ (e.g., less than 0.1) while insulative andsemiconductor materials, such as metallic oxides have a high γ, fromabout 1 to about 10 with some insulators exceeding a value of 20. Thus,the coating 150 acts as a source of secondary emitted electrons.

Secondary electron emission, γ, may be described by the formula (1):

γ=Γ_(secondary)/Γ_(ion)   (1)

In formula (1) γ is the secondary electron emission yield orcoefficient, Γ_(secondary) is the electron flux, and Γ_(ion) is the ionflux. Secondary emission occurs due to the impacts of plasma species(e.g., ions) onto the coating 150 when the ion impact collisions havesufficient energy to induce secondary electron emission, thus generatingγ-mode discharges. Generally discharges are said to be in γ-mode whenelectron generation occurs at electrode surfaces (i.e., γ>1) instead ofin the gas (an α-mode discharge). In other words, per each ion collidingwith the coating 150, a predetermined number of secondary electrons areemitted. Thus, γ may also be thought of as a ratio of the Γ_(secondary)(e.g., the electron flux) and Γ_(ion) (e.g., the ion flux).

These ion collisions with the surface of the coating 150, in turn,provide sufficient energy for secondary electron emission to generate γdischarges. The ability of coating materials to generate γ dischargesvaries with several parameters, with the most influence due to thechoice of materials having a high γ as discussed above. This propertyallows coating 150 to act as a source of secondary emitted electrons oras a catalytic material to enhance selected chemical reaction paths.

Over time the coating 150 may thin or be removed during the plasmaoperation. In order to maintain the coating 150 to continually provide asource of secondary emitted electrons, the coating 150 may becontinually replenished during the plasma operation. This may beaccomplished by adding species that reformulate the native coating onthe inner and outer electrodes 122 and 123. In one embodiment, theprecursor source 18 may provide either oxygen or nitrogen gas to thedevice 12 to replenish to oxide or nitride coating.

Secondary electron emission forms sheath layers 132 and 133 about theinner and outer electrodes 122 and 123, respectively. The sheath layers132 and 133 have working ranges R₁ and R₂, which are representative ofthe thickness of energetic electron sheath layers 132 and 133 disposedabout the inner and outer electrodes 122 and 123. In other words, rangesR₁ and R₂ indicate regions with a greatly increased concentration ofelectrons with relatively high energies that drive dissociationreactions in the gas phase. The coating 150 on electrodes 122 and/or 123can increase or enhance working ranges R₁ and R₂ of energetic secondaryelectrons. In particular, varying the thickness of the coating 150 canbe used to adjust the working ranges R₁ and R₂. A gap distance Δ showsthe zone where the concentration of energetic secondary electrons isrelatively lower. Coating the electrodes, as discussed above, reducesgap distance Δ. In some embodiments, distance Δ may be reduced to zeroand/or working ranges R₁ and R₂ may overlap thereby creating an hollowcathode effect.

Formation of the sheath layers 132 and 133 is also controlled by thesupply of the ionizable media and the precursors. Ionizable media andthe precursors are selected that are relatively transparent to theenergetic electrons released during secondary emission from the surfaceof the coating 150. As stated above, the plasma is generated atatmospheric pressure. Due to the increased entropy at such pressure, thegenerated electrons undergo a multitude of collisions in a relativelyshort period of time and space forming the sheath layers 132 and 133.

With reference to FIG. 4A-4H, the coating 150 may also include aplurality of nanostructured pores 160, which may be arranged in apredetermined (e.g., unidirectional) or random manner and may be treatedto include one or more types of catalyst materials 162 disposed therein(FIG. 4H). The catalyst materials 162 are suitable for initiation of thechemical reactions within the plasma effluent 32.

FIG. 5 in conjunction with FIGS. 4A-4G illustrate a method of formingthe coating 150 on a substrate 140 (e.g., surface of the inner and outerelectrodes 122 and 123) having a top surface 142. As discussed above,the substrate 140 may be formed from a conductive metal such asaluminum, titanium and the like. In step 200, the substrate 140 ispolished using any suitable technique, such as abrasive polishing toremove rough edges from the top surface 142 as shown in FIG. 4A. Thesubstrate 140 may be subsequently electro-polished to smooth out thesurface 142 on a nano-scale level as shown in FIG. 4B.

In one embodiment, electro-polishing may be accomplished by submergingthe substrate 140 in an acidic solution having a pH from about 1 pH toabout 7 pH, in embodiments, from about 1 pH to about 4 pH at atemperature of from about 0° C. to about 50° C., in embodiments, fromabout 0° C. to about 5° C. for a period of from about 0.1 minutes toabout 100 minutes, in embodiments, from about 0.1 minutes to about 10minutes and supplying a DC voltage to the solution of from about 1 V toabout 300 V, in embodiments, from about 10 V to about 30 V. The solutionmay be an aqueous solution or an alcohol may be used as a solvent.Examples of suitable acids for electro-polishing include perchloricacid, nitric acid, sulfuric acid and combinations thereof. Examples ofalcohols suitable for electro-polishing include ethanol, methanol,2-propanol and combinations thereof.

In step 202, the polished substrate 140 is anodized. This may beaccomplished by submerging the substrate 140 in an acidic solutionhaving a pH from about 1 pH to about 7 pH, in embodiments, from about 1pH to about 3 pH at a temperature of from about 0° C. to about 100° C.,in embodiments, from about 5° C. to about 20° C. for a period of fromabout 1 minutes to about 3,000 minutes, in embodiments, from about 120minutes to about 300 minutes and supplying a voltage to the solution offrom about 2 V to about 500 V, in embodiments, from about 20 V to about50 V. Examples of suitable acids for anodization include oxalic acid,chromic acid, sulfuric acid, phosphoric acid, sulfosalicylic acid, andcombinations thereof. Anodization removes a top surface layer of thesubstrate 140 and forms metal-oxide formations 144 on the top surface142 forming an intermediate metal oxide layer as shown in FIG. 4C.Removal of the top surface layer also produces concave protuberances 146on the top surface 142.

In step 204, the metal-oxide formations 144 are removed as shown in FIG.4D, such that the protuberances 146 are exposed. This may beaccomplished by submerging the substrate 140 in an acidic solutionhaving a pH from about 1 pH to about 7 pH, in embodiments, from about 1pH to about 3 pH at a temperature of from about 0° C. to about 100° C.,in embodiments, from about 40° C. to about 80° C. for a period of fromabout 1 minutes to about 3000 minutes, in embodiments, from about 120minutes to about 300 minutes. Examples of suitable acids for removingnative metal-oxide formations 144 include oxalic acid, chromic acid,sulfuric acid, phosphoric acid, sulfosalicylic acid, and combinationsthereof.

In step 206, the substrate 140 having the protuberances 146 is anodizedthe second time. This may be accomplished by submerging the substrate140 in an acidic solution having a pH from about 1 pH to about 7 pH, inembodiments, from about 1 pH to about 3 pH at a temperature of fromabout 0° C. to about 100° C., in embodiments, from about 5° C. to about20° C. for a period of from about 1 minutes to about 3000 minutes, inembodiments, from about 120 minutes to about 300 minutes and supplying avoltage to the solution of from about 1 V to about 5000 V, inembodiments, from about 20 V to about 500 V. The second anodizationrebuilds the metal-oxide formations 144 as shown in FIG. 4E that aremore uniform than the formations 144 formed in step 202 (FIG. 4C).

In step 208, pores 148 are formed within each of the metal-oxideformations 144 as shown in FIG. 4F. In other words, the bottommetal-oxide portion of each of the metal-oxide formations 144 contactingthe protuberances 146 is removed, such that the protuberances 146 areexposed. This may be accomplished by submerging the substrate 140 in anacidic solution having a pH from about 1 pH to about 7 pH, inembodiments, from about 1 pH to about 3 pH at a temperature of fromabout 0° C. to about 100° C., in embodiments, from about 5° C. to about20° C. for a period of from about 1 minutes to about 1000 minutes, inembodiments, from about 120 minutes to about 300 minutes and supplying avoltage to the solution of from about 200 V to about 5 V, inembodiments, from about 20 V to about 50 V. The pore formation processmay be performed within the same solution as the second anodization(e.g., step 206) with the voltage decreased from about 500 V to about 1V, in embodiments, from about 50 V to about 5 V at a rate of from about0.01 V/s to about 20 V/s, in embodiment from about 0.1 V/s to about 2V/s. The decrease in voltage removes the lower portion of themetal-oxide formations 144 exposing a portion of the protuberances 146.

In step 210, the pores 148 are widened at the base thereof, namely at apoint where the metal-oxide formations 144 contact the protuberances 146of the substrate 140. This may be accomplished by submerging thesubstrate 140 in an acidic solution having a pH from about 1 pH to about7 pH, in embodiments, from about 1 pH to about 3 pH at a temperature offrom about 0° C. to about 100° C., in embodiments, from about 20° C. toabout 40° C. for a period of from about 0 minutes to about 500 minutes,in embodiments, from about 30 minutes to about 120 minutes. This processwidens the base of the pores 148 forming an inverted mushroom shape asshown in FIG. 4G.

In step 212, a catalyst material 162 is embedded in the widened pores148. The substrate 140 is submerged in a solution having a pH from about4 pH to about 10 pH, in embodiments, from about 6 pH to about 8 pH at atemperature of from about 0° C. to about 100° C., in embodiments, fromabout 20° C. to about 40° C. for a period of from about 0.5 minutes toabout 300 minutes, in embodiments, from about 1 minutes to about 60minutes and supplying a voltage to the solution of from about 0.5 V toabout 100 V, in embodiments, from about 5 V to about 40 V pulsed at afrequency of from about 5 Hz to about 2000 Hz, in embodiments, fromabout 50 Hz to about 200 Hz. This process deposits the catalystmaterials 162, namely, nickel metal into the widened pores 148. Examplesof suitable metals that can act as catalysts include noble metals, suchas ruthenium, rhodium, palladium, silver, osmium, iridium, platinum,gold; metal catalysts, such as nickel, copper, cobalt, iron; metal oxidecatalysts such as iron oxide, ruthenium oxide; photo catalysts such astitanium oxide, copper-iron loaded titanium oxide and silicone oxide,sodium tantalite with co-catalyst nickel oxide, bimetal catalysts suchas platinum-ruthenium, platinum-gold, and combinations thereof. Thecatalyst material 162 can be provided as a salt or organic compound,examples of which include metal halides, such as nickel chloride,platinum chloride, and combinations thereof.

The following Examples are being submitted to illustrate embodiments ofthe present disclosure. These Examples are intended to be illustrativeonly and are not intended to limit the scope of the present disclosure.Also, parts and percentages are by weight unless otherwise indicated. Asused herein, “room temperature” refers to a temperature of from about20° C. to about 30° C.

EXAMPLE 1 Embedding Catalysts in Nanoporous Alumina

An aluminum tubular substrate was electro-polished to smooth out thesurface thereof. The substrate was by submerged in an acidic solution ofperchloric acid (85% by volume) and ethanol (1:7 volume ratio) at atemperature of about 5° C. for a period of about 3 minutes and supplyinga voltage of about 20 V DC to the solution.

The polished substrate was then anodized to form a metal-oxide layerthereon by submerging the substrate in an acidic solution of 0.3M oxalicacid at a temperature of about 5° C. for a period of about 4 hours andsupplying a voltage of about 40 V to the solution. The metal-oxide layerwas then removed to form protuberances on the surface thereof bysubmerging the substrate in an acidic 85% by weight solution of chromiumoxide (Cr₂O₃) and phosphoric acid (H₃PO₄) at a temperature of about 60°C. for a period of about 3 hours. The substrate was then anodized thesecond time to form a porous metal-oxide layer by submerging thesubstrate in an acidic solution of 0.3M oxalic acid at a temperature ofabout 5° C. for a period of about 4 hours and supplying a voltage ofabout 40 V to the solution.

Pores were formed within the metal-oxide layer by submerging thesubstrate in an acidic solution of 0.3M oxalic acid at a temperature ofabout 5° C. for a period of about 300 seconds and supplying a voltage ofabout 10 V to the solution. The pore formation process was performedwithin the same solution as the second anodization with the voltagedecreased from about 40 V to about 10 V at a rate of about −0.1 V/s.

The pores were then widened by submerging the substrate 140 in an acidicsolution of 5% by weight of H₃PO₄ at a temperature of about 60° C. for aperiod of about 40 minutes. Nickel was then embedded within the pores bysubmerging the substrate in a solution of 300 g/L NiSO₄*6H₂O at atemperature of about 35° C. for a period of about 3 minutes andsupplying a voltage of about 18 V pulsed at approximately 170 Hz to thesolution.

FIGS. 6A and 6B illustrate a cross-sectional view and a top view of theembedded nickel oxide layer on the surface of the substrate taken usinga scanning electron microscope. As shown in FIGS. 6A and 6B, nickel waslocated at the openings of the porous oxide layer, which aids in thecatalytic action and prevents arc formation.

EXAMPLE 2 Tissue Removal

FIG. 7 illustrates effects of plasma on ex vivo chicken muscle tissuewhen applied through an aluminum electrode coated with aluminum oxideand through an aluminum electrode coated with aluminum oxide and nickelembedded within the pores thereof, as discussed in Example 1. Thepresence of embedded nickel catalysts resulted in twice as deep tissueremoval. Relative mass loss of the removed tissue is illustrated by thebar graph of FIG. 8. The plasma generated in the presence of embeddednickel catalysts also resulted in twice as much mass removal.

FIG. 9 illustrates a comparison bar graph of emission spectra of plasmaspecies generated by plasma in the presence and in the absence ofembedded nickel catalysts. The plasma generated in the presence ofembedded nickel catalysts resulted in twice as many hydroxyl radicals.The increase in tissue removal depth and mass may be attributed to thesimilar increase in the production of hydroxyl radicals due to thepresence of embedded nickel catalysts.

Although the illustrative embodiments of the present disclosure havebeen described herein with reference to the accompanying drawings, it isto be understood that the disclosure is not limited to those preciseembodiments, and that various other changes and modifications may beeffected therein by one skilled in the art without departing from thescope or spirit of the disclosure. In particular, as discussed abovethis allows the tailoring of the relative populations of plasma speciesto meet needs for the specific process desired on the workpiece surfaceor in the volume of the reactive plasma.

What is claimed is:
 1. A plasma device comprising: at least oneelectrode including a nanoporous dielectric layer disposed on at least aportion thereof, the nanoporous dielectric layer including a pluralityof pores, wherein at least a portion of the plurality of pores include acatalyst embedded therein.
 2. The plasma device according to claim 1,wherein the dielectric coating is selected from the group consisting ofan oxide, a nitride, a native oxide and a native nitride.
 3. The plasmadevice according to claim 1, wherein the metal alloy is selected fromthe group consisting of an aluminum alloy and a titanium alloy.
 4. Theplasma device according to claim 1, wherein the catalyst is selectedfrom the group consisting of ruthenium, rhodium, palladium, silver,osmium, iridium, platinum, gold, nickel, copper, cobalt, iron, andoxides and bimetal combinations thereof.
 5. The plasma device accordingto claim 1, further comprising: an outer electrode having asubstantially cylindrical tubular shape defining a lumen therethrough;and an inner electrode coaxially disposed within lumen, the innerelectrode having a substantially cylindrical tubular shape.
 6. A plasmasystem comprising: a plasma device having at least one electrodeincluding a nanoporous dielectric layer disposed on at least a portionthereof, the nanoporous dielectric layer including a plurality of pores,wherein at least a portion of the plurality of pores include a catalystembedded therein; an ionizable media source coupled to the plasma deviceand configured to supply ionizable media thereto; and a power sourcecoupled to the inner and outer electrodes and configured to ignite theionizable media at the plasma device to form a plasma effluent.
 7. Theplasma system according to claim 6, wherein the dielectric coating isselected from the group consisting of an oxide, a nitride, a nativeoxide and a native nitride.
 8. The plasma system according to claim 6,wherein the metal alloy is selected from the group consisting of analuminum alloy and a titanium alloy.
 9. The plasma system according toclaim 6, wherein the catalyst is selected from the group consisting ofruthenium, rhodium, palladium, silver, osmium, iridium, platinum, gold,nickel, copper, cobalt, iron, and oxides and bimetal combinationsthereof.
 10. The plasma system according to claim 6, further comprising:an outer electrode having a substantially cylindrical tubular shapedefining a lumen therethrough; and an inner electrode coaxially disposedwithin lumen, the inner electrode having a substantially cylindricaltubular shape.
 11. A method comprising: forming a nanoporous dielectriclayer including a plurality of pores on at least a portion of anelectrode; and embedding at least a portion of the plurality of poreswith a catalyst.
 12. The method according to claim 11, wherein formingof the nanoporous dielectric layer further comprises: electropolishingat least a portion of the electrode.
 13. The method according to claim12, wherein forming of the nanoporous dielectric layer furthercomprises: forming an intermediate dielectric layer on theelectropolished portion of the electrode by anodizing theelectropolished portion.
 14. The method according to claim 13, whereinforming of the nanoporous dielectric layer further comprises: removingthe intermediate dielectric layer from the electropolished portion toform a plurality of protuberances on the electrode.
 15. The methodaccording to claim 14, wherein forming of the nanoporous dielectriclayer further comprises: forming the nanoporous dielectric layerincluding the plurality of pores on the plurality of protuberances. 16.The method according to claim 15, wherein forming of the nanoporousdielectric layer further comprises: removing a portion of the pluralityof pores contacting the plurality of protuberances.
 17. The methodaccording to claim 16, wherein forming of the nanoporous dielectriclayer further comprises: widening the plurality of pores.
 18. The methodaccording to claim 11, wherein forming of the nanoporous dielectriclayer further comprises: submerging the nanoporous dielectric layer in asolution of a salt of the catalyst.